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The Nexperia BCP55,115 is an NPN medium power transistor housed in a SOT223 (SC-73) surface-mounted package. It supports a collector current of 1 A and a collector-emitter voltage of 60 V. The device features a peak collector current of 2 A for single pulses up to 1 ms. DC current gain ranges from 63 to 250 at 150 mA. Transition frequency reaches 180 MHz. Total power dissipation varies from 0.65 W to 1.35 W depending on PCB mounting conditions.
Verify the specific ordering suffix matches the required gain bin, as the base part number covers multiple variants. Confirm RoHS compliance status and REACH registration details against current regulatory standards before finalizing procurement. Ensure the selected package variant aligns with the intended PCB footprint and thermal design requirements.
Select this component for applications requiring robust NPN switching or amplification in a compact surface-mount form factor. Evaluate the thermal resistance characteristics relative to the specific PCB copper area available for heat sinking. Consider the transition frequency limits when designing high-speed signal paths or pulse-driven circuits.
This device belongs to the BCP55 series of NPN medium power transistors manufactured by Nexperia. It is designed for general-purpose use in electronic circuits where moderate power handling and reliable switching are required. The SOT223 package provides a balance between power dissipation and board space efficiency.
BCP55-10,115
The maximum peak collector current is 2 A for a single pulse duration of 1 ms or less.
Total power dissipation ranges from 0.65 W to 1.35 W, depending on the size of the collector mounting pad on the FR4 PCB.
No, this specific product data sheet indicates it is not automotive qualified unless explicitly stated otherwise.