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Product Detailed Parameters
- Description：TRANS NPN 60V 1A SOT-223-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 2V
- Power - Max：2 W
- Frequency - Transition：150MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-261-4, TO-261AA
- Supplier Device Package：SOT-223-3
- Grade：-
- Qualification：-
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Overview
The Diodes Incorporated BCP5516TA is an NPN medium power transistor housed in a SOT223 surface-mount package. It features a collector-emitter voltage (VCEO) of 60 V and supports a continuous collector current (IC) of 1 A with a peak pulse current (ICM) of 2 A. The device offers a power dissipation capability of 2 W and includes gain group 16, providing a DC current gain (hFE) range of 100 to 250 at IC = 150 mA. Electrical characteristics include a transition frequency (fT) of 150 MHz and a maximum collector-base breakdown voltage (VCBO) of 60 V.
Feature Summary
- High continuous collector current capability of 1 A with low saturation voltage
- Gain group 16 selection for high DC current amplification
- Totally lead-free and fully RoHS compliant construction
Applications
- Medium power switching applications
- Audio frequency driver stages
- Amplifier output stages
Procurement Notes
Verify the specific ordering suffix 'TA' against official Diodes documentation to confirm reel size and tape width specifications. Ensure compliance requirements match project needs, as the component is halogen- and antimony-free. Confirm that the gain group 16 designation aligns with circuit design parameters before finalizing procurement orders.
Selection Notes
Select this component when a 60 V NPN transistor with 1 A continuous current handling is required. The gain group 16 specification ensures higher current amplification compared to standard variants. Verify thermal management capabilities, as the 2 W power dissipation rating depends on adequate PCB copper area and ambient temperature conditions.
Part Context
This part belongs to the BCP54/55/56 family of NPN medium power transistors manufactured by Diodes Incorporated. The family shares the SOT223 case outline but varies in breakdown voltage ratings. The BCP55 variant specifically provides a 60 V rating, distinguishing it from the 45 V BCP54 and 80 V BCP56 models within the same series.
Replacement Considerations
BCP5616TA
FAQ
What is the DC current gain range for the BCP5516TA?
The DC current gain (hFE) ranges from 100 to 250 when measured at a collector current of 150 mA and a collector-emitter voltage of 2 V.
Is the BCP5516TA suitable for automotive applications?
Standard versions are not automatically qualified for automotive use. For applications requiring AEC-Q100/101/200 qualification or PPAP capability, customers must contact Diodes Incorporated directly.
