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The BCP56-10-QX is an NPN medium power transistor from the Nexperia BCP56-Q series, housed in a SOT223 (SC-73) surface-mounted plastic package. It features an 80 V collector-emitter voltage rating and a continuous 1 A collector current capability, with a peak pulse current of 2 A. The device offers three current gain selections; the -10 suffix denotes a specific hFE range of 63 to 160 at VCE = 2 V and IC = 150 mA. Qualified under AEC-Q101 for automotive applications, it supports junction temperatures up to 150 °C and includes an exposed heatsink for enhanced thermal dissipation.
Verify the complete part number against official Nexperia documentation to ensure correct current gain binning and packaging specifications. Confirm that the SOT223 footprint aligns with your PCB design guidelines. Ensure application conditions remain within the absolute maximum ratings defined in the datasheet to maintain device integrity and automotive qualification status.
Select this component when an NPN medium power transistor with automotive qualification is required. The BCP56-10 variant provides a guaranteed hFE range of 63 to 160, suitable for precise biasing needs. Consider the SOT223 package for its balance of power handling and board space efficiency compared to larger through-hole options.
This device belongs to the BCP56-Q series of NPN transistors designed for robust performance in demanding environments. The series shares the same physical package and general electrical limits but differs in current gain classifications. The PNP complement for this series is the BCP53-Q.
BCP53-10-Q is the PNP complement within the same series. Other BCP56-Q variants include BCP56-Q and BCP56-16-Q, which differ only in DC current gain ranges.
The DC current gain (hFE) for the BCP56-10-Q ranges from 63 to 160, measured at VCE = 2 V and IC = 150 mA.
Yes, the device is qualified according to AEC-Q101 and is recommended for use in automotive applications.
The maximum collector-emitter voltage (VCEO) with the base open is 80 V.