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The BCP56-10,115 is an NPN medium power transistor from the Nexperia BCP56 series, housed in a SOT223 (SC-73) surface-mount package. It supports a collector current of 1 A and peak currents up to 2 A. The device features a collector-emitter voltage rating of 80 V and a collector-base voltage of 100 V. DC current gain (hFE) ranges from 63 to 160 at IC = 150 mA and VCE = 2 V. Total power dissipation reaches 1.35 W with a 6 cm² collector pad on FR4 PCB. Transition frequency is 180 MHz.
Verify that the specific part number suffix matches the required gain binning. Confirm the package type corresponds to the design footprint. Check the most recent datasheet revision for any updates to electrical characteristics or marking codes. Ensure compliance with RoHS standards if applicable to the assembly process.
Select this component when an NPN transistor with 80 V breakdown and 1 A continuous current is needed. The BCP56-10 variant provides a specific gain range suitable for consistent amplification or switching performance. Consider the SOT223 package size and thermal requirements relative to the application's power dissipation needs.
This device belongs to the BCP56 series of NPN medium power transistors manufactured by Nexperia. The series includes variants with different current gain specifications to accommodate various circuit design requirements. These transistors are designed for general-purpose applications requiring reliable performance in surface-mount assemblies.
BCP56 and BCP56-16 are alternative gain bins within the same series. BCP53-10T is the PNP complement offering similar electrical characteristics for complementary push-pull configurations.