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Product Detailed Parameters
- Description：TRANS NPN 80V 1A SOT-223
- Series：BCP56T-Q
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：63 @ 150mA, 2V
- Power - Max：600 mW
- Frequency - Transition：155MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-261-4, TO-261AA
- Supplier Device Package：SOT-223
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The Nexperia BCP56-10T-Q is an NPN medium power transistor in the BCP56T-Q series, housed in a SOT223 (SC-73) surface-mount package. It supports a collector-emitter voltage of 80 V and continuous collector current of 1 A, with peak currents reaching 2 A. The device features a DC current gain range of 63 to 160 at IC = 150 mA. Qualified under AEC-Q101 for automotive use, it operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- High collector current capability for both continuous and pulsed operations
- Three distinct current gain selections available within the series
- High power dissipation capability suitable for thermal management
- Qualified according to AEC-Q101 for automotive applications
Applications
- Linear voltage regulators
- MOSFET drivers
- High-side switches
- Power management circuits
- Amplifiers
Procurement Notes
Verify the specific suffix 'QX' against official Nexperia documentation to confirm packaging details, as datasheets typically reference standard tape-and-reel formats. Confirm that the AEC-Q101 qualification status applies to the exact ordering variant intended for automotive deployment. Ensure design parameters remain within the absolute maximum ratings defined in the product data sheet.
Selection Notes
Select this component when an NPN transistor with 80 V breakdown and 1 A continuous current capacity is required in a compact SOT223 footprint. The BCP56-10T-Q variant offers a specific gain binning (63-160) compared to other series members. Consider the thermal resistance characteristics and PCB mounting pad size for adequate heat dissipation in high-power scenarios.
Part Context
This part belongs to the BCP56T-Q series of NPN medium power transistors manufactured by Nexperia. The series includes complementary PNP devices such as the BCP53T-Q. These components are designed for general-purpose switching and amplification tasks, offering robust performance in automotive and industrial environments due to their AEC-Q101 qualification.
Replacement Considerations
The direct PNP complement within the same series is the BCP53-10T-Q. Other variants in the family include BCP56T-Q and BCP56-16T-Q, which differ primarily in current gain specifications rather than electrical limits or package type.
