BCP56-10T1G

Overview

The BCP56-10T1G is an NPN medium power bipolar junction transistor manufactured by onsemi. It operates with a collector-emitter voltage of 80 V and supports a continuous collector current of 1 A. The device features a DC current gain (hFE) range of 63 to 160, designated by the '10' suffix. It is housed in a SOT-223 surface-mount package with a maximum power dissipation of 1.5 W. The component is qualified for automotive applications under the AEC-Q100 standard.

Feature Summary

• High continuous collector current capability suitable for medium power switching and amplification tasks
• Automotive-grade qualification ensuring reliability in demanding vehicle environments
• Low collector-emitter saturation voltage for efficient power management
• Complementary PNP types available within the same series

Applications

• Linear voltage regulators
• MOSFET drivers
• Low-side switches
• Battery-driven devices
• Power management circuits

Procurement Notes

Verify the specific hFE binning classification corresponding to the '10' suffix during procurement to ensure alignment with circuit gain requirements. Confirm that the ordering part number includes the 'G' suffix to guarantee compliance with halogen-free and RoHS directives as specified by the manufacturer. Cross-reference the package marking code to distinguish between different gain ranges within the BCP56 family.

Selection Notes

Select this component when an NPN transistor with an hFE range of 63 to 160 is required for 80 V, 1 A applications. The SOT-223 package provides adequate thermal performance for 1.5 W dissipation in surface-mount designs. Ensure the design accounts for the specific gain binning, as other variants like the -16 offer higher minimum gain thresholds. This part is appropriate for general-purpose amplification and switching where automotive reliability is beneficial.

Part Context

The BCP56-10T1G belongs to the BCP56 series of NPN medium power transistors produced by onsemi. This series is designed for use in various electronic applications requiring robust performance in a compact surface-mount footprint. The device shares functional similarities with complementary PNP types such as the BCP53, allowing for push-pull configurations in amplifier stages.

Replacement Considerations

Direct substitutes include the Nexperia BCP56-10T and Diodes Inc. BCP56-10TC. Verify that replacement parts maintain the identical 63-160 hFE gain range and 80 V rating to ensure circuit compatibility without modification.