BCP56

BCP56

$0.35
  • Description:TRANS NPN 80V 1.2A SOT-223-4
  • Series:-

SKU:bfaf9bb1c2db Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 80V 1.2A SOT-223-4
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1.2 A
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
  • Power - Max:1 W
  • Frequency - Transition:-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-261-4, TO-261AA
  • Supplier Device Package:SOT-223-4
  • Grade:-
  • Qualification:-

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BCP56

Overview

The BCP56 is an NPN silicon epitaxial transistor designed for medium power surface mount applications. It features a collector-emitter voltage of 80 Vdc, a collector-base voltage of 100 Vdc, and an emitter-base voltage of 5 Vdc. The device supports a continuous collector current of 1 Adc with a peak current of 2 Adc. Total power dissipation is rated at 1.5 W at 25°C ambient temperature, derating by 12 mW/°C above this threshold. The junction-to-ambient thermal resistance is 83.3 °C/W. Operating and storage temperatures range from -65 to +150 °C. The DC current gain (hFE) varies by sub-type: minimum values are 25 at 5 mA, 40 at 150 mA for the standard BCP56, and 63 at 500 mA.

Feature Summary

  • High current capability supporting up to 1 A continuous and 2 A peak collector current
  • SOT-223 package design allows wave or reflow soldering with formed leads that absorb thermal stress to protect the die
  • Available in automotive-grade configurations with S and NSV prefixes, qualified to AEC-Q101 standards and PPAP capable

Applications

  • Audio amplifier circuits
  • Linear voltage regulators
  • MOSFET drivers
  • High-side switches

Procurement Notes

Verify the specific ordering suffix to confirm packaging quantity and automotive qualification status. Standard reels contain 1000 units while larger reels contain 4000 units. Prefixes such as S or NSV indicate unique site requirements and AEC-Q101 qualification. Confirm RoHS compliance and Pb-free status for environmental regulations. Ensure the correct hFE bin is selected based on the required DC current gain for the application.

Selection Notes

Select the appropriate sub-type based on the required DC current gain (hFE) at specific operating currents. The standard BCP56 offers a minimum hFE of 40 at 150 mA, while the BCP56-16 variant provides higher gain characteristics. Consider the thermal management requirements given the 1.5 W power dissipation limit and 83.3 °C/W thermal resistance. For automotive applications requiring strict quality control, choose parts with the S or NSV prefix. Ensure the SOT-223 package fits the available PCB space and soldering process capabilities.

Part Context

The BCP56 belongs to the BCP56 Series of NPN silicon epitaxial transistors manufactured by onsemi. These devices are part of a family including complementary PNP types like the BCP53. The series is engineered for medium power surface mount applications, utilizing the SOT-223 package. This context places the component within the broader category of general-purpose medium power bipolar junction transistors suitable for switching and amplification tasks.

Replacement Considerations

The official PNP complement is the BCP53T1G. Other manufacturers produce equivalent NPN transistors in the SOT-223 package with similar electrical ratings, such as the BCX56. Verify pinout compatibility and thermal characteristics when substituting with cross-manufacturer components.

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