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Product Detailed Parameters
- Description：TRANS NPN 80V 1A 3WDFNW
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：63 @ 150mA, 2V
- Power - Max：1.5 W
- Frequency - Transition：140MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：3-WDFN Exposed Pad
- Supplier Device Package：3-WDFNW (2x2)
- Grade：-
- Qualification：-
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Overview
The BCP5610MTWG is an NPN silicon bipolar junction transistor manufactured by onsemi, designed for medium-power applications. It utilizes a WDFNW-3 surface-mount package to facilitate compact circuit board layouts. The device supports a continuous collector current of 1 A and withstands a collector-emitter voltage (VCEO) of 80 V. Key electrical characteristics include a peak pulse collector current of 2 A, a power dissipation rating of 1.5 W, and a DC current gain (hFE) ranging from 63 to 250. The component operates within a temperature range of -65°C to +150°C.
Feature Summary
- High thermal stability with a maximum operating temperature of +150°C
- Robust switching capability with a 2 A peak pulse collector current
- Compact footprint enabled by the WDFNW-3 surface-mount package
Applications
- General-purpose switching circuits
- Medium-power amplifier stages
- Driver circuits for low-to-medium load requirements
Procurement Notes
Verify the specific suffix MTWG against official onsemi documentation to confirm the exact reel or cut-tape packaging configuration. Ensure that the WDFNW-3 package dimensions align with your PCB footprint design rules. Cross-reference the RoHS compliance status directly with the manufacturer's latest datasheet release notes before finalizing procurement orders.
Selection Notes
Select this component when a single NPN transistor with 80 V breakdown voltage and 1 A continuous current capacity is required in a small outline package. Consider the hFE range of 63 to 250 for biasing calculations. Evaluate the 1.5 W power dissipation limit relative to your thermal management strategy. Compare against other BCP56 series variants if different voltage ratings or complementary PNP types are needed.
Part Context
This part belongs to the BCP56M series of NPN medium-power transistors from onsemi. It is engineered for use in consumer electronics and industrial control systems where space constraints and thermal performance are critical. The WDFNW-3 package offers a balance between power handling capabilities and minimal board area consumption compared to traditional through-hole alternatives.
Replacement Considerations
Consult official cross-reference guides for verified substitutes. Potential equivalents may include other NPN transistors with similar 80 V VCEO and 1 A IC ratings in compatible packages.
