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The onsemi BCP5616MTWG is an NPN silicon epitaxial planar transistor housed in a SOT-223 surface-mount package. It features a collector-emitter voltage (VCEO) of 80 V and a continuous collector current (IC) of 1 A. The device offers a DC current gain (hFE) range of 100 to 250, with a minimum guaranteed value of 100 for the '16' suffix variant. Power dissipation reaches 2 W at 25°C ambient temperature. The transition frequency (fT) is specified at 125 MHz, and the operating junction temperature extends up to +150°C.
Verify the specific suffix against the manufacturer's official datasheet to confirm the exact hFE binning and packaging configuration. Ensure the ordering part number matches the required gain range and tape-and-reel specifications. Cross-reference the RoHS compliance status and lead times directly with authorized distributors or the manufacturer's sales channels prior to procurement.
Select this component when an NPN transistor with 80 V blocking capability and 1 A load handling is required in a SOT-223 form factor. The '16' designation indicates a specific current gain bin; verify that the 100-250 hFE range aligns with the target circuit's biasing needs. Consider the complementary PNP type if a push-pull configuration is necessary for the design.
This device belongs to the BCP56 series of NPN medium power transistors. It serves as the NPN counterpart to the BCP53 PNP transistor within the same family. The series is designed for general-purpose medium power applications, offering a balance of voltage rating, current capacity, and gain consistency in a standard surface-mount package widely used in consumer and industrial electronics.
Compatible substitutes include the Nexperia BCP56-16T and Diodes Inc. BCP5616TC. Verify pinout compatibility and ensure the alternative part meets the same 80 V/1 A electrical ratings and SOT-223 package dimensions before integration.