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The BCP5616QTA is an NPN medium power Bipolar Junction Transistor (BJT) manufactured by Diodes Incorporated. It features a collector-emitter voltage of 80V, continuous collector current of 1A, and peak pulse current of 2A. The device dissipates up to 2W of power in a SOT-223 package with a thermal resistance of 62°C/W junction-to-ambient. DC current gain ranges from 25 to 250 depending on operating conditions, while the transition frequency reaches 150MHz at 50mA. It operates within a temperature range of -55°C to +150°C and meets AEC-Q101 automotive qualification standards.
Verify that the ordering suffix matches the required packaging quantity, as the TA suffix indicates a 1,000-unit reel size. Confirm the presence of the Automotive marking code on the component surface to ensure compliance with specified change control requirements. Cross-reference the date code markings against production timelines to validate component age and storage history prior to integration into final assemblies.
Select this component when designing circuits requiring robust NPN switching performance in automotive environments. The SOT-223 package provides adequate thermal dissipation for medium power loads without excessive board space consumption. Ensure base drive currents are sufficient to maintain low saturation voltages during high-current operation phases.
This transistor belongs to the BCP56 series of NPN medium power devices designed for general-purpose amplification and switching tasks. The Q suffix denotes automotive-grade manufacturing processes compliant with IATF16949 standards. Complementary PNP types are available within the same product family for push-pull configurations.
BCP5316Q serves as the complementary PNP type within the same automotive-qualified series.