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The BCP5616QTC is an NPN medium power Bipolar Junction Transistor (BJT) manufactured by Diodes Incorporated in a SOT-223 package. It is designed for automotive applications and meets AEC-Q101 qualification standards with PPAP capability, produced in IATF16949 certified facilities. The device features a maximum collector-emitter voltage of 80V, a continuous collector current of 1A, and a peak pulse collector current of 2A. It offers a power dissipation rating of 2W and operates within a temperature range of -55°C to +150°C.
Verify the component matches the official Diodes Incorporated datasheet DS36981 Rev. 5-2 specifications. Confirm that the marking code on the physical device aligns with the 'BCP 5616' designation found in the ordering information section. Ensure the supplier provides traceability documentation appropriate for automotive-grade components.
Select this component when designing circuits that require high reliability in automotive environments. It serves as a suitable alternative to standard commercial grade transistors where strict quality control and change management protocols are mandatory. Consider its complementary PNP type, the BCP5316Q, if a matched pair is required for push-pull configurations.
This transistor belongs to the BCP5416Q/BCP5616Q family of NPN medium power transistors. It shares the same mechanical footprint and general electrical characteristics as the BCP5416Q, differing primarily in breakdown voltage ratings. The suffix 'TC' indicates a specific tape and reel packaging configuration containing 4,000 units per reel.
The BCP5416Q is a related part within the same series but has a lower collector-emitter breakdown voltage of 45V compared to the 80V rating of the BCP5616Q. Verify voltage requirements before substituting.