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The Diodes Incorporated BCP6825TA is an NPN silicon planar medium power transistor housed in a SOT-223 package. It features a collector-emitter voltage of 20 V and a continuous collector current of 1 A. The device provides a minimum DC current gain (hFE) of 160 at IC=500mA, VCE=1V, with a transition frequency of 100 MHz. Power dissipation reaches 2 W at 25°C ambient temperature. The component operates within a junction temperature range of -55 to +150 °C.
Verify the specific suffix '25' against official datasheets to confirm the hFE binning grade. Ensure the SOT-223 package matches the target PCB footprint. Confirm RoHS compliance status if required by assembly specifications. Cross-reference absolute maximum ratings with circuit stress conditions.
Select this component when a medium power NPN transistor with high current gain is required for audio applications. The 20 V rating suits low-voltage signal processing. Compare hFE ranges against circuit biasing requirements. Consider thermal management for the SOT-223 package under load.
This part belongs to the BCP68 series of NPN medium power transistors. It serves as the complementary counterpart to the PNP BCP69 device. The series is engineered for general-purpose amplification tasks requiring moderate power handling capabilities in compact surface-mount packages.
Direct substitutes include the BCP69-25 for complementary PNP applications. Verify pinout compatibility and electrical parameters before swapping manufacturers.