BCP6925H6327XTSA1

Overview

The BCP6925H6327XTSA1 is a PNP bipolar junction transistor manufactured by Infineon Technologies. It operates with a collector-emitter voltage of 20 V and supports a continuous collector current of 1 A. The device features a transition frequency of 100 MHz and a power dissipation rating of 3 W. Packaged in a surface-mount PG-SOT223-4 housing, it is designed for general-purpose switching and amplification applications.

Feature Summary

• PNP configuration suitable for high-side switching
• Surface-mount PG-SOT223-4 package for compact designs
• High current handling capability up to 1 A

Applications

• General-purpose switching circuits
• Amplifier stages requiring PNP topology
• Power management modules

Procurement Notes

This component is scheduled for obsolescence and will be discontinued by the manufacturer. Procurement should account for end-of-life status, limited availability, and potential supply chain constraints. Verify final stock levels and lead times with authorized distributors before committing to design-in decisions.

Selection Notes

Select this part only if legacy compatibility or specific PNP characteristics are required. Due to its discontinuation status, alternative components with similar electrical ratings and pin configurations should be evaluated for new designs to ensure long-term supply stability.

Part Context

Infineon's BCP69 series provides robust PNP transistors for various electronic applications. The H6327 suffix denotes specific packaging and tape-and-reel specifications. This model represents a standard discrete semiconductor solution within Infineon's broader portfolio of bipolar devices.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Designers should consult official replacement guides or contact Infineon directly for qualified alternatives.