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The BCP6925TA is a PNP silicon planar medium power transistor manufactured by Diodes Incorporated. It operates within a collector-emitter voltage of -20 V and supports a continuous collector current of -1 A. The device features a low saturation voltage and high current gain, with a transition frequency of 100 MHz. Power dissipation reaches 2 W at 25°C ambient temperature. It is housed in an SOT223 package.
Verify the specific suffix '25' against official datasheets to confirm the hFE binning range. Confirm the SOT223 package type matches design requirements. Ensure thermal management aligns with the 2W dissipation rating at 25°C ambient conditions. Cross-reference manufacturer documentation for absolute maximum ratings before integration.
Select this component for applications requiring medium power handling and high current gain. Consider the complementary BCP68 for push-pull topologies. Evaluate thermal constraints relative to the specified power dissipation limits. Verify that the required current transfer ratio falls within the specified minimum and maximum bounds for the target operating point.
This part belongs to the BCP69 series of PNP silicon planar transistors. It serves as the complementary counterpart to the BCP68 NPN device. The series is engineered for medium power applications requiring robust current handling capabilities. The specific marking detail distinguishes it from other variants within the family.
The BCP68 is the documented complementary NPN type. Verify pinout compatibility and electrical parameters when substituting with generic PNP equivalents. Ensure replacement devices meet the -20V collector-emitter voltage and -1A current specifications.
The maximum collector-emitter voltage (VCEO) is -20 V.
The hFE ranges from 63 to 250 at IC=-500mA and VCE=-1V.
It utilizes the SOT223 surface-mount package.