BCP69E6327

BCP69E6327

$0.05
  • Description:POWER BIPOLAR TRANSISTOR
  • Series:-

SKU:62d9b4d3ac3f Category: Brand:

  
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Product Detailed Parameters

  • Description:POWER BIPOLAR TRANSISTOR
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk
  • Transistor Type:-
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Power - Max:-
  • Frequency - Transition:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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BCP69E6327

Overview

BCP69E6327 is a PNP silicon power bipolar transistor in a SOT-89 surface-mount package. It features a maximum collector current of 1 A and a collector-emitter voltage of 20 V. The device has a single configuration with three pins, offering a maximum power dissipation of 330 mW and a transition frequency of 100 MHz. Operating temperatures range from -55 °C to +150 °C.

Feature Summary

  • PNP silicon construction for reliable switching and amplification
  • SOT-89 surface-mount package for compact board integration
  • High collector current capability suitable for power applications

Applications

  • Amplifier circuits
  • General-purpose switching
  • Power management modules

Procurement Notes

Verify the manufacturer origin as Siemens or Infineon on the datasheet, as legacy branding may appear. Confirm the specific suffix E6327 matches your required tape-and-reel packaging format. Check RoHS compliance status directly from the official document before procurement.

Selection Notes

Select this component when a PNP transistor with 1 A continuous current and 20 V breakdown is required in an SOT-89 footprint. Ensure the application voltage does not exceed the 20 V limit. Consider thermal management due to the 330 mW power dissipation rating in small packages.

Part Context

This part belongs to the BCP69 series of PNP transistors. It serves as a power discrete semiconductor component designed for general-purpose amplifier and switching tasks. The E6327 suffix typically denotes specific packaging and ordering variants within the Infineon portfolio.

Replacement Considerations

Consult official cross-reference lists for direct substitutes. Generic replacements must match the 1 A current, 20 V voltage, and SOT-89 package constraints.

BCP69E6327BCP69E6327
$0.05
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