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Product Detailed Parameters
- Description：TRANS PNP 20V 1A SOT223
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：20 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 100mA, 1A
- Current - Collector Cutoff (Max)：10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：85 @ 500mA, 1V
- Power - Max：1.5 W
- Frequency - Transition：60MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-261-4, TO-261AA
- Supplier Device Package：SOT-223 (TO-261)
- Grade：-
- Qualification：-
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Overview
The BCP69T1G is a PNP silicon epitaxial planar transistor manufactured by onsemi, designed for low voltage and high current applications. It features a maximum DC collector current of -1 A and a collector-emitter voltage (VCEO) of -20 V. The device is housed in a surface-mount SOT-223-4 package with four pins. Key electrical specifications include a collector-base voltage (VCBO) of 25 V, an emitter-base voltage (VEBO) of 5 V, and a power dissipation (Pd) of 1.5 W at 25°C. The minimum DC current gain (hFE) is 50, and the transition frequency (fT) is 60 MHz. Operating temperatures range from -65°C to +150°C.
Feature Summary
- High current handling capability suitable for demanding output stages
- SOT-223 package optimized for thermal performance and visual inspection
- AEC-Q101 qualified for automotive reliability standards
Applications
- Low voltage power amplifier circuits
- Automotive electronic systems requiring AEC-Q101 compliance
- General purpose switching applications in consumer electronics
Procurement Notes
Verify the specific ordering suffix and prefix against official onsemi documentation to ensure correct packaging and automotive qualification status. Confirm RoHS compliance and halogen-free status requirements. Check for any recent product change notices regarding tape material or manufacturing site changes before finalizing procurement orders.
Selection Notes
Select this component when a PNP transistor with 1 A continuous current and 20 V breakdown voltage is required in a surface-mount format. Consider the complementary NPN model BCP68T1G for push-pull configurations. Ensure the application operates within the specified thermal derating curves for the SOT-223 package to maintain reliability under high load conditions.
Part Context
The BCP69T1G belongs to the BCP69 series of bipolar junction transistors from onsemi. It is part of a family designed for general-purpose amplification and switching tasks. The NSVBCP69T1G variant shares identical electrical characteristics but includes specific automotive supply chain controls and PPAP capabilities for original equipment manufacturer integration.
Replacement Considerations
The BCP68T1G serves as the direct NPN complementary counterpart within the same series. Designers utilizing complementary pairs should verify that both devices meet the specific thermal and current requirements of the circuit topology.
