BCV27E6327HTSA1

Overview

The BCV27E6327HTSA1 is an NPN silicon Darlington transistor manufactured by Infineon Technologies. It is housed in a surface-mount PG-SOT23 package with three pins. The component features a maximum repetitive peak reverse voltage of 50 V and supports a collector current up to 500 mA. It operates within a temperature range extending to 150 °C and has a maximum power dissipation of 330 mW. The device is designed for high-gain amplification applications requiring robust switching capabilities.

Feature Summary

• Integrated NPN silicon Darlington configuration providing high current gain
• Designed for surface-mount assembly in compact PG-SOT23 packages
• Capable of handling moderate collector currents for switching tasks

Applications

• General-purpose switching circuits
• Low-power amplifier stages
• Driver circuits for small loads

Procurement Notes

Verify the specific suffix E6327HTSA1 against official Infineon documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and check for any end-of-life notices or obsolescence warnings directly from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component when a high-gain NPN switching solution is required in a small SOT-23 footprint. Ensure the application voltage does not exceed the 50 V rating and that thermal management can handle the 330 mW dissipation limit. Compare against standard BJT alternatives if lower cost is prioritized over Darlington gain characteristics.

Part Context

This part belongs to Infineon's discrete semiconductor portfolio, specifically within the bipolar junction transistor category. The BCV series typically denotes Darlington transistors optimized for general-purpose use. The HTSA1 suffix indicates specific packaging and ordering details defined by Infineon for distribution channels.