BCV47E6433HTMA1

Overview

The BCV47E6433HTMA1 is an NPN silicon Darlington transistor manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 60 V and a maximum DC collector current of 500 mA. The device is housed in a surface-mount SOT-23 package with a maximum power dissipation of 330 mW. It offers a minimum DC current gain (hFE) of 2000 and operates within a junction temperature range up to +150 °C. The component is AEC-Q100 qualified for automotive applications.

Feature Summary

• High current amplification capability provided by the Darlington configuration
• Automotive-grade reliability through AEC-Q100 qualification
• Compact surface-mount design suitable for space-constrained PCB layouts

Applications

• Automotive low-side switching circuits
• General-purpose amplifier stages requiring high gain
• Driver circuits for relays or solenoids

Procurement Notes

Verify the specific suffix E6433HTMA1 against official Infineon documentation to confirm packaging, tape-and-reel specifications, and RoHS compliance status. Ensure the procurement channel provides traceability to the original manufacturer. Confirm that the component meets the required AEC-Q100 standards if used in automotive environments. Check for any end-of-life notices or obsolescence warnings directly from the supplier before finalizing orders.

Selection Notes

Select this component when high current gain is required in a small form factor. The SOT-23 package limits power dissipation to 330 mW, necessitating adequate thermal management. The 60 V rating suits low-voltage switching applications. Consider the 500 mA current limit for load requirements. Verify compatibility with the target operating temperature range and ensure the driver circuit can supply sufficient base current to achieve saturation.

Part Context

This part belongs to the BCV47 series of NPN Darlington transistors. It is designed for general-purpose amplification and switching tasks. The E6433HTMA1 suffix indicates specific packaging and ordering details defined by Infineon. It serves as a discrete semiconductor solution for controlling higher currents with lower input signals in compact electronic designs.

Replacement Considerations

BCV47E6433XT is listed as an alias for this component. Verify electrical equivalence and pinout compatibility before substitution. No other cross-model substitutes are confirmed in the provided data.