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The BCV49,135 is an NPN silicon planar Darlington transistor manufactured by Nexperia. It is housed in a UPAK surface-mount package with four leads and contains one chip per unit. The device supports a maximum continuous collector current of 500 mA and a collector-emitter voltage (Vceo) of 60 V. Key electrical parameters include a minimum DC current gain (hFE) of 2000, a maximum power dissipation (Pd) of 1.3 W, and a collector-emitter saturation voltage (VceSAT) of 1 V. The component operates within a temperature range of -65°C to +150°C.
Verify the specific suffix against official Nexperia documentation to confirm tape-and-reel packaging specifications. Ensure the ordering part number matches the required quantity per reel. Confirm RoHS compliance status through the manufacturer's latest datasheet before finalizing procurement orders.
Select this component when a high-gain NPN transistor is required in a compact SMD form factor. The UPAK package offers a balance between thermal dissipation and board space efficiency. Verify that the 60 V collector-emitter voltage rating meets the circuit's maximum operating conditions.
This component belongs to the BCV49 series of NPN Darlington transistors from Nexperia. The series is designed for general-purpose applications requiring high current gain in small packages. The BCV49,135 variant specifically denotes the tape-and-reel packaging configuration for automated manufacturing processes.
Consult official Nexperia substitution guides for verified equivalents. Cross-reference pinouts and electrical ratings carefully when considering alternative manufacturers.