BCW30

BCW30

$0.03
  • Description:TRANS PNP 32V 0.5A SOT-23-3
  • Series:-

SKU:a0fcfe5e923a Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 32V 0.5A SOT-23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):32 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:215 @ 2mA, 5V
  • Power - Max:350 mW
  • Frequency - Transition:-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:-
  • Qualification:-

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BCW30

Overview

The BCW30 is a PNP general-purpose amplifier transistor manufactured by onsemi, housed in an SOT-23 surface-mount package. It features a collector-emitter voltage (VCEO) of -32 V and a continuous collector current (IC) rating of -500 mA. The device provides a minimum DC current gain (hFE) of 215 at IC = -2.0 mA. Key electrical characteristics include a collector-base breakdown voltage of -32 V and a base-emitter breakdown voltage of -5.0 V. Thermal performance specifies a total power dissipation of 350 mW with a junction-to-ambient thermal resistance of 357 °C/W. Operating temperatures range from -55°C to +150°C.

Feature Summary

  • Designed for general-purpose medium power amplification and switching applications requiring collector currents up to 300 mA.
  • Utilizes process 68 technology sourced from Fairchild Semiconductor specifications.
  • Provides high DC current gain suitable for signal amplification tasks.

Applications

  • General purpose medium power amplifiers
  • Electronic switching circuits

Procurement Notes

Verify the manufacturer origin carefully, as the BCW30 was originally developed by Fairchild Semiconductor before being acquired by onsemi. Confirm that the specific lot or revision matches the required datasheet version (e.g., Rev. B1 or I1) to ensure alignment with the absolute maximum ratings and electrical characteristics defined in the official documentation. Check for lead-free compliance status if RoHS requirements are strict.

Selection Notes

Select this component when a PNP transistor with a -32 V collector-emitter voltage and -500 mA continuous current capability is required in a compact SOT-23 footprint. Ensure the application does not exceed the 350 mW power dissipation limit without adequate thermal management. Consider the hFE range of 215 to 500 for biasing calculations in amplifier designs.

Part Context

The BCW30 belongs to the family of small-signal bipolar junction transistors (BJTs). It is functionally similar to other PNP transistors in the SOT-23 package but is distinguished by its specific voltage ratings and current handling capabilities derived from the process 68 manufacturing line. It serves as a standard discrete component for analog signal processing and low-power control logic.

Replacement Considerations

Check for direct equivalents such as the BCY54 or generic PNP SOT-23 transistors with matching VCEO and IC ratings. Verify pinout compatibility (Base-Emitter-Collector) against potential substitutes like the BCW30LT1 or BCW30LT3 to ensure correct circuit integration without rewiring.

FAQ

What is the maximum collector current for the BCW30?

The BCW30 supports a continuous collector current (IC) of -500 mA.

Is the BCW30 suitable for life support devices?

No, Fairchild Semiconductor explicitly states that products are not authorized for use as critical components in life support devices without express written approval.

What is the packaging type for the BCW30?

The BCW30 is available in the SOT-23 surface-mount package.

BCW30BCW30
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