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The BCW30LT1 is a PNP silicon epitaxial planar transistor manufactured by onsemi in a SOT-23 (TO-236) surface-mount package. It features a collector-emitter voltage rating of -32 Vdc and a continuous collector current capacity of -100 mAdc. The device offers a minimum DC current gain (hFE) of 215 at a collector current of -2.0 mAdc. It operates within a junction temperature range of -55 to +150 °C and is compliant with RoHS standards, being lead-free and halogen-free.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package style and reel specifications. Ensure that the procurement channel provides valid traceability for components designated as AEC-Q101 qualified. Confirm compliance with environmental directives such as RoHS and lead-free status through the supplier's certificate of conformity prior to integration into production.
Select this component when a PNP transistor with a -32 V collector-emitter breakdown and -100 mA continuous current capability is required in a small surface-mount footprint. Consider the thermal resistance characteristics and the specified DC current gain range when designing biasing networks for amplifier stages or switch drivers operating within the defined temperature limits.
This part belongs to the BCW series of general-purpose transistors produced by onsemi. It serves as the PNP complement to NPN devices within the same family, sharing similar packaging and general application profiles. The series is widely utilized in consumer electronics and industrial control circuits where reliable switching and amplification are needed in space-constrained designs.
BCW30LT3
In the SOT-23 package, Pin 1 is the Base, Pin 2 is the Emitter, and Pin 3 is the Collector.
Yes, the device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
The maximum junction temperature (TJ) and storage temperature (Tstg) range from -55 °C to +150 °C.