BCW30LT1G

BCW30LT1G

$0.18
  • Description:TRANS PNP 32V 0.1A SOT23-3
  • Series:-

SKU:a4c36ef862d8 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 32V 0.1A SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):32 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:215 @ 2mA, 5V
  • Power - Max:300 mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Grade:-
  • Qualification:-

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BCW30LT1G

Overview

The BCW30LT1G is a single NPN bipolar junction transistor manufactured by onsemi. It utilizes silicon technology and is housed in an SOT-23-3 surface-mount package. The device supports a maximum continuous collector current of 100 mA and operates with a collector-emitter voltage (VCEO) of 45 V. Key electrical characteristics include a collector-base voltage (VCBO) of 50 V, an emitter-base voltage (VEBO) of 5 V, and a DC current gain (hFE) minimum of 200 at specified test conditions. Power dissipation is rated at 225 mW, with a transition frequency (fT) of 100 MHz. The component functions within a temperature range of -55°C to +150°C.

Feature Summary

  • Single NPN configuration for discrete signal amplification
  • Silicon-based construction for stable operation
  • Surface-mount SOT-23-3 packaging for compact integration

Applications

  • General-purpose switching circuits
  • Small-signal amplification stages
  • Driver applications for low-power loads

Procurement Notes

Verify the specific suffix 'LT1G' against official onsemi documentation to confirm tape-and-reel packaging and RoHS compliance status. Ensure the ordering part number matches the exact electrical specifications required for the design. Cross-reference datasheet revisions to confirm pinout consistency and material declarations before finalizing procurement orders.

Selection Notes

Select this component when a standard NPN transistor with 100 mA current handling and 45 V breakdown voltage is required in a small footprint. Consider the 100 MHz transition frequency for moderate-speed switching or amplification tasks. Evaluate thermal management requirements based on the 225 mW power dissipation limit in the SOT-23-3 package during steady-state operation.

Part Context

This component belongs to the BCW30 series of general-purpose NPN transistors from onsemi. It is designed for use in consumer electronics and industrial control systems where space-constrained surface-mount solutions are necessary. The device complements PNP counterparts in push-pull configurations and serves as a fundamental building block in analog and digital logic interface circuits.

Replacement Considerations

Consult official cross-reference lists for verified equivalents such as the BC847B series or other NPN transistors with matching VCEO, IC, and package dimensions. Confirm that any substitute maintains identical pinout assignments and meets the same thermal and electrical performance criteria defined in the original datasheet.

BCW30LT1GBCW30LT1G
$0.18
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