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Product Detailed Parameters
- Description：TRANS NPN 32V 0.5A SOT-23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：32 V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：110 @ 2mA, 5V
- Power - Max：350 mW
- Frequency - Transition：200MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The onsemi BCW31 is an NPN general-purpose amplifier transistor housed in a surface-mount SOT-23 package. It features a collector-emitter voltage (VCEO) of 32 V and a collector-base voltage (VCBO) of 32 V, with an emitter-base breakdown voltage (VEBO) of 5.0 V. The device supports a maximum DC collector current (IC) of 500 mA and total power dissipation (PD) of 350 mW at 25°C. Key electrical characteristics include a DC current gain (hFE) ranging from 110 to 220 at IC = 2.0 mA, a collector-emitter saturation voltage (VCE(sat)) of 0.25 V max at IC = 10 mA, and a base-emitter on voltage (VBE(on)) between 0.55 V and 0.7 V. Thermal resistance (RθJA) is 357 °C/W.
Feature Summary
- Designed for general-purpose switching and amplification applications
- Low voltage operation capability suitable for signal processing
- Plastic SOT-23 surface-mount packaging for compact integration
Applications
- General purpose switching circuits
- Amplifier stages
- Signal conditioning
Procurement Notes
Verify the specific manufacturer origin, as the BCW31 part number is produced by multiple vendors including Nexperia and Fairchild Semiconductor. Confirm that the datasheet specifications match your design requirements, particularly regarding thermal limits and absolute maximum ratings. Ensure the component status is active for production use, as availability varies significantly across different suppliers.
Selection Notes
Select this component when a low-voltage NPN transistor with moderate current handling is required for space-constrained designs. The SOT-23 package facilitates automated assembly. Compare hFE ranges and saturation voltages against circuit requirements to ensure adequate gain and efficiency. Consider the thermal resistance and power dissipation limits relative to the expected operating temperature and load conditions.
Part Context
The BCW31 belongs to a family of NPN general-purpose transistors often paired with PNP complements like the BCW30. These devices are widely used in consumer electronics and industrial control systems where small-signal amplification and switching are needed. The SOT-23 form factor is standard for surface-mount technology, allowing for high-density PCB layouts.
Replacement Considerations
BCW32LT1
FAQ
What is the maximum collector current rating?
The maximum DC collector current (IC) is rated at 500 mA.
What is the typical DC current gain range?
The DC current gain (hFE) typically ranges from 110 to 220 when tested at IC = 2.0 mA and VCE = 5.0 V.
Is this device suitable for high-frequency applications?
While it has a transition frequency (fT) specification, it is primarily designed for general-purpose low-frequency switching and amplification rather than high-speed RF applications.
