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The BCW32,215 is an NPN general-purpose bipolar junction transistor manufactured by Nexperia. It is housed in a plastic SOT-23 surface-mount package with three leads. The device supports a maximum collector-emitter voltage (VCEO) of 32 V and a continuous DC collector current (IC) of 100 mA. Key electrical characteristics include a DC current gain (hFE) range of 200 to 450 at IC = 2 mA and VCE = 5 V, and a transition frequency (fT) of 100 MHz at IC = 10 mA. Total power dissipation is rated at 250 mW at an ambient temperature of 25 °C.
Verify the specific ordering suffix
Select this component when a standard NPN transistor with moderate gain and low voltage ratings is required. Compare against BCW31 and BCW33 variants if different gain thresholds are needed. Ensure the design accommodates the 250 mW thermal limit and verify that the SOT-23 footprint matches the target PCB layout constraints.
This part belongs to the BCW3x series of NPN general-purpose transistors produced by Nexperia. The series includes complementary PNP devices such as the BCW29 and BCW30. These components are widely utilized across automotive, industrial, computing, consumer, and wearable application markets due to their standardized packaging and reliable performance specifications.
Direct functional substitutes within the same family include the BCW31 and BCW33. Verify that the replacement variant meets the specific gain requirements of the circuit design before implementation.
The marking code for the BCW32 is D2.
Pin 1 is the base, Pin 2 is the emitter, and Pin 3 is the collector.
The maximum peak collector current (ICM) is 200 mA.