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The BCW33LT1 is an NPN silicon general-purpose transistor manufactured by onsemi. It operates with a maximum collector-emitter voltage of 32 Vdc and a continuous collector current of 100 mAdc. The device features a DC current gain (hFE) ranging from 420 to 800 at 2.0 mAdc. Thermal dissipation reaches 225 mW on an FR-5 board. It is housed in a SOT-23 package (CASE 318) and supplied in tape and reel quantities of 3000 units.
Verify the specific ordering suffix against official documentation to confirm packaging details, such as tape and reel specifications. Ensure the component meets required environmental standards like RoHS compliance if applicable. Confirm pinout orientation matches the CASE 318 standard before integration into printed circuit board designs.
Select this component when high current gain is required for low-current signal amplification. The 32 V rating limits suitability for higher voltage environments. Evaluate thermal resistance values relative to the intended PCB substrate material to ensure junction temperatures remain within safe operating limits during continuous operation.
This part belongs to the BCW33 series of NPN general-purpose transistors. It serves as a complementary device to PNP variants like the BCW30. The series is designed for low-power applications requiring reliable switching and amplification in compact surface-mount configurations.
Compatible substitutes include the BCW33LT3 for larger tape and reel quantities. Verify electrical parameters match requirements when considering cross-manufacturer alternatives.