BCW33LT1G

BCW33LT1G

$0.14
  • Description:TRANS NPN 32V 0.1A SOT23-3
  • Series:-

SKU:429144dcbed9 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 32V 0.1A SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):32 V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
  • Power - Max:300 mW
  • Frequency - Transition:-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Grade:-
  • Qualification:-

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BCW33LT1G

Overview

The BCW33LT1G is a single NPN silicon bipolar junction transistor manufactured by onsemi. It is housed in an SOT-23 surface-mount package designed for low-voltage, low-power applications. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 45 V and a maximum collector-base voltage (VCBO) of 50 V. The device supports a continuous collector current of 100 mA with a power dissipation rating of 225 mW. It features a transition frequency (fT) of 300 MHz and a minimum DC current gain (hFE) of 200 at specified test conditions.

Feature Summary

  • High DC current gain ensures efficient signal amplification in low-current circuits.
  • Transition frequency of 300 MHz supports operation in high-speed switching and RF applications.
  • Compact SOT-23 package facilitates automated surface-mount assembly and space-constrained designs.

Applications

  • General-purpose signal amplification
  • Switching applications in consumer electronics
  • Driver stages for low-power loads

Procurement Notes

Verify the component authenticity by checking the manufacturer's marking code against official datasheet references. Confirm RoHS compliance status through the supplier's declaration documents. Ensure the ordering suffix matches the required tape-and-reel or cut-tape packaging format for your production line requirements.

Selection Notes

Select this component when a single NPN transistor with moderate voltage ratings and high current gain is required. Compare the 225 mW power dissipation limit against thermal constraints in the final enclosure. Verify that the SOT-23 footprint aligns with the PCB layout guidelines and soldering profile specifications.

Part Context

This part belongs to the BCW72L series of small-signal transistors from onsemi. It shares the same physical package and general performance characteristics as other members of the family, differentiated primarily by internal doping profiles and specific gain binning. The series is widely used in portable devices due to its low power consumption and small form factor.

Replacement Considerations

Direct pin-compatible substitutes within the same series include BCW72LT1G. Cross-manufacturer equivalents such as the BC847B series may be considered if electrical parameters like hFE and VCEO are verified to meet the design margins.

BCW33LT1GBCW33LT1G
$0.14
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