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The BCW60CE6327HTSA1 is an NPN silicon small-signal bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in a surface-mount SOT-23-3 package and meets AEC-Q100 automotive qualification standards. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 32 V. Key electrical parameters include a transition frequency of 250 MHz, a power dissipation rating of 330 mW, and a DC current gain range from 250 to 460. It operates within a temperature range of -65°C to +150°C.
Verify the complete part number including the E6327 suffix to ensure correct tape-and-reel packaging specifications. Confirm that the AEC-Q100 qualification status aligns with specific automotive project requirements. Check official documentation for any end-of-life notices or obsolescence warnings prior to finalizing procurement plans.
Select this component when an NPN configuration with moderate current handling and high-speed switching is required. The SOT-23-3 footprint offers space efficiency for compact designs. Ensure the 32V voltage rating and 100mA current limit are sufficient for the target circuit load conditions.
This component belongs to the BCW60 series of NPN silicon transistors designed for general-purpose use. It shares the SOT-23-3 form factor common across many Infineon small-signal devices. The E6327 designation specifically identifies the reel-based packaging format used for automated surface-mount assembly processes.
Consult official Infineon documentation for verified cross-reference data. No public substitute part numbers are confirmed in the available source material.