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Product Detailed Parameters
- Description：TRANS NPN 32V 0.1A PG-SOT23
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：32 V
- Vce Saturation (Max) @ Ib, Ic：550mV @ 1.25mA, 50mA
- Current - Collector Cutoff (Max)：20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：380 @ 2mA, 5V
- Power - Max：330 mW
- Frequency - Transition：250MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：PG-SOT23
- Grade：-
- Qualification：-
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Overview
The BCW60FNE6393HTSA1 is an NPN silicon small-signal transistor manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 32 V and a continuous collector current rating of 0.1 A. The device operates within a temperature range of -55 °C to +150 °C, with a power dissipation capacity of 330 mW. Key electrical characteristics include a gain bandwidth product of 250 MHz and a collector-emitter saturation voltage of 200 mV at specified bias conditions.
Feature Summary
- NPN silicon construction optimized for audio-frequency input stages
- Designed for driver applications in signal processing circuits
- SOT-23 surface-mount package for compact integration
Applications
- Audio-frequency input stages
- Driver applications
- Signal processing circuits
Procurement Notes
Verify the specific ordering suffix '6393' against official Infineon documentation to confirm tape-and-reel specifications. Ensure compatibility with standard SOT-23 footprint requirements during PCB layout. Cross-reference the part number with the latest manufacturer qualification reports to validate component authenticity and performance consistency.
Selection Notes
Select this component when designing low-power audio or signal conditioning circuits requiring an NPN transistor with a 32 V breakdown voltage. Consider its 250 MHz gain bandwidth for high-speed switching or amplification needs. Evaluate thermal management capabilities given the 330 mW power dissipation limit in the SOT-23 package.
Part Context
This part belongs to Infineon's small-signal transistor portfolio, specifically engineered for general-purpose amplification tasks. It complements other NPN devices in the BCW series, offering reliable performance in consumer electronics and automotive signal interfaces where space constraints necessitate compact surface-mount solutions.
Replacement Considerations
Consult official cross-reference lists for compatible NPN transistors with matching 32 V ratings and 0.1 A current limits. Verify pinout compatibility and thermal resistance parameters before substituting with alternative manufacturers' components.
