BCW61AE6327HTSA1

BCW61AE6327HTSA1

  • Description:TRANS PNP 32V 0.1A PG-SOT23
  • Series:-

SKU:110d8d0d5076 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PNP 32V 0.1A PG-SOT23
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):32 V
  • Vce Saturation (Max) @ Ib, Ic:550mV @ 1.25mA, 50mA
  • Current - Collector Cutoff (Max):20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 2mA, 5V
  • Power - Max:330 mW
  • Frequency - Transition:250MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:PG-SOT23
  • Grade:-
  • Qualification:-

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BCW61AE6327HTSA1

Overview

The BCW61AE6327HTSA1 is a dual NPN silicon bipolar junction transistor manufactured by Infineon Technologies. It is housed in an SOT-143-4 surface-mount package and features a maximum DC collector current of 100 mA with a collector-emitter voltage (VCEO) of 30 V. The device supports a power dissipation of 300 mW and operates within a temperature range of -65°C to +150°C. It meets AEC-Q100 automotive qualification standards and offers a gain-bandwidth product (fT) of 250 MHz.

Feature Summary

  • Dual NPN configuration for compact circuit integration
  • Automotive-grade reliability via AEC-Q100 qualification
  • High-frequency performance suitable for signal processing

Applications

  • General-purpose switching applications
  • Amplifier circuits requiring dual transistor arrays
  • Automotive electronic control modules

Procurement Notes

Verify the specific suffix E6327HTSA1 against official Infineon documentation to confirm packaging and tape-and-reel specifications. Ensure compatibility with SOT-143-4 footprint requirements during PCB layout. Confirm that the AEC-Q100 qualification aligns with target automotive or industrial application standards before finalizing component selection.

Selection Notes

Select this component when a dual NPN BJT array is required in a small SOT-143-4 package. It is appropriate for designs needing 30 V collector-emitter voltage and 100 mA continuous current capability. Consider its 250 MHz transition frequency for high-speed switching or amplification tasks where space efficiency is critical.

Part Context

This part belongs to the BCW61 series of dual NPN transistors from Infineon. It shares the SOT-143-4 form factor with other devices in the lineup but is distinguished by its specific electrical ratings and automotive qualification status. The series is designed for general-purpose applications requiring reliable dual-transistor functionality in compact surface-mount enclosures.

Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. No public substitute part numbers are confirmed in available data.

BCW61AE6327HTSA1BCW61AE6327HTSA1

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