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The BCW61AE6327HTSA1 is a dual NPN silicon bipolar junction transistor manufactured by Infineon Technologies. It is housed in an SOT-143-4 surface-mount package and features a maximum DC collector current of 100 mA with a collector-emitter voltage (VCEO) of 30 V. The device supports a power dissipation of 300 mW and operates within a temperature range of -65°C to +150°C. It meets AEC-Q100 automotive qualification standards and offers a gain-bandwidth product (fT) of 250 MHz.
Verify the specific suffix E6327HTSA1 against official Infineon documentation to confirm packaging and tape-and-reel specifications. Ensure compatibility with SOT-143-4 footprint requirements during PCB layout. Confirm that the AEC-Q100 qualification aligns with target automotive or industrial application standards before finalizing component selection.
Select this component when a dual NPN BJT array is required in a small SOT-143-4 package. It is appropriate for designs needing 30 V collector-emitter voltage and 100 mA continuous current capability. Consider its 250 MHz transition frequency for high-speed switching or amplification tasks where space efficiency is critical.
This part belongs to the BCW61 series of dual NPN transistors from Infineon. It shares the SOT-143-4 form factor with other devices in the lineup but is distinguished by its specific electrical ratings and automotive qualification status. The series is designed for general-purpose applications requiring reliable dual-transistor functionality in compact surface-mount enclosures.
Consult official Infineon cross-reference guides for verified substitutes. No public substitute part numbers are confirmed in available data.