SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BCW61BE6327HTSA1 is an NPN silicon dual bipolar junction transistor manufactured by Infineon Technologies. It is housed in a surface-mount SOT-143-4 package and holds AEC-Q100 automotive qualification. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 30 V, a maximum collector-base voltage (VCBO) of 30 V, and an emitter-base voltage (VEBO) of 6 V. The device supports a continuous collector current of 100 mA with a power dissipation rating of 300 mW. It features a transition frequency (fT) of 250 MHz, a saturation voltage of 200 mV, and operates within a temperature range of -65°C to +150°C.
Verify the specific suffix HTSA1 to confirm the tape-and-reel packaging format required for automated assembly processes. Confirm that the AEC-Q100 qualification status meets your specific automotive grade requirements. Check the manufacturer's latest documentation for any end-of-life notifications or recommended design-in alternatives due to potential supply chain adjustments.
Select this component when a dual NPN configuration is required in a small SOT-143-4 footprint. Ensure the 30 V voltage rating and 100 mA current capacity align with the circuit load requirements. Consider the 250 MHz transition frequency if high-speed switching or moderate-frequency amplification is necessary for the application design.
This part belongs to the BCW61 series of dual NPN transistors produced by Infineon Technologies. It shares the same electrical characteristics and pinout as the BCV61CE6327HTSA1 but may differ in binning or specific manufacturing lot specifications. Both devices utilize the SOT-143-4 package and are designed for similar general-purpose and automotive applications requiring dual transistor functionality.
BCV61CE6327HTSA1 is a confirmed substitute with identical electrical specifications and package type.