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The BCW61CE6327HTSA1 is an NPN silicon double bipolar junction transistor (BJT) from Infineon Technologies, housed in a surface-mount SOT-143-4 package. It features a maximum collector current of 100 mA and a collector-emitter voltage rating of 30 V. The device exhibits a high DC current gain ranging from 420 to 800 and a transition frequency of 250 MHz. With a power dissipation capacity of 300 mW and an operating temperature range spanning -65°C to +150°C, it meets AEC-Q100 automotive qualification standards.
Verify the specific ordering suffix E6327HTSA1 to ensure correct packaging and reel specifications. Confirm that the component status remains active or manage obsolescence risks appropriately. Cross-reference the datasheet for exact thermal resistance values during PCB layout planning. Ensure compatibility with automated pick-and-place equipment for the SOT-143-4 footprint.
Select this component when a dual NPN BJT is required in a small surface-mount form factor. The high current gain makes it suitable for low-current amplification tasks. Verify that the 30 V voltage rating aligns with circuit requirements. Consider the AEC-Q100 qualification if the application demands automotive-grade reliability standards.
This part belongs to the BCW61 series of general-purpose NPN transistors manufactured by Infineon Technologies. The series is designed for versatile use in both consumer and automotive electronics. The specific suffix indicates the tape and reel packaging format used for high-volume manufacturing integration.
Consult official Infineon documentation for verified cross-references. Generic substitutes may not match the precise gain ranges or automotive qualification requirements.