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Product Detailed Parameters
- Description：TRANS PNP 32V 0.1A SOT-23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：32 V
- Vce Saturation (Max) @ Ib, Ic：550mV @ 1.25mA, 50mA
- Current - Collector Cutoff (Max)：20nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 2mA, 5V
- Power - Max：350 mW
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The BCW61CMTF is a PNP general-purpose bipolar junction transistor manufactured by onsemi. It is housed in an SOT-23-3 surface-mount package and utilizes silicon technology. The device supports a maximum continuous collector current of 100 mA and withstands a collector-emitter voltage (VCEO) of 32 V. Key electrical characteristics include a collector-base voltage (VCBO) of 32 V, an emitter-base voltage (VEBO) of 5 V, and a DC current gain (hFE) range of 140 to 310. Power dissipation is rated at 350 mW, with a maximum operating temperature of +150°C.
Feature Summary
- PNP polarity configuration for general-purpose amplification and switching applications
- High DC current gain ranging from 140 to 310 for efficient signal control
- Low collector-emitter saturation voltage for improved power efficiency
- SOT-23-3 surface-mount packaging for compact circuit board integration
Applications
- General-purpose amplifier circuits
- Switching applications requiring low saturation voltage
- Driver stages for audio frequency input applications
Procurement Notes
Verify the specific suffix 'MTF' against the manufacturer's official documentation to confirm tape-and-reel packaging specifications. Confirm RoHS compliance status through the latest datasheet or material declaration. Ensure the component matches the required hFE binning (BCW61C grade) for your design's gain requirements. Check for any End-of-Life notices or production change notifications prior to finalizing procurement plans.
Selection Notes
Select this component when a PNP transistor with moderate current handling and high gain is required in a small footprint. The BCW61C variant offers a specific gain range suitable for consistent performance in linear and switching modes. Consider the complementary NPN type for push-pull configurations. Evaluate the thermal management needs based on the 350 mW power dissipation limit in the SOT-23 package.
Part Context
The BCW61 series comprises PNP silicon transistors designed for general-purpose use. The BCW61CMTF represents a specific gain bin within this family, optimized for applications demanding predictable current amplification. Manufactured by onsemi, these devices are part of a broader lineup including complementary NPN types like the BCW60, facilitating balanced circuit designs.
Replacement Considerations
Publicly confirmed substitute part numbers for the BCW61CMTF were not identified in the provided source data. Cross-reference with other manufacturers offering PNP SOT-23 transistors with matching VCEO, IC, and hFE specifications if direct substitution is necessary.
