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Product Detailed Parameters
- Description：TRANS NPN 32V 0.8A SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：800 mA
- Voltage - Collector Emitter Breakdown (Max)：32 V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：20nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 100mA, 1V
- Power - Max：225 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The BCW65CLT1G is a single NPN silicon bipolar junction transistor manufactured by onsemi. It operates within a collector-emitter voltage (VCEO) of 32 V and a collector-base voltage (VCBO) of 60 V, with an emitter-base breakdown voltage (VEBO) of 5 V. The device supports a maximum continuous DC collector current of 800 mA and features a minimum DC current gain (hFE) of 80. Electrical characteristics include a collector-emitter saturation voltage of 700 mV and a transition frequency (fT) of 100 MHz. Thermal management allows for power dissipation up to 225 mW, with an operating temperature range spanning from -55 °C to +150 °C.
Feature Summary
- Utilizes silicon technology for robust small-signal amplification and switching applications.
- Provides high-speed performance characterized by a 100 MHz transition frequency.
- Designed for surface-mount integration using the SOT-23-3 package configuration.
Applications
- General-purpose signal amplification in electronic circuits
- High-speed switching operations requiring fast response times
- Low-voltage logic interface driving tasks
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm exact electrical binning and packaging specifications. Ensure that the component meets required RoHS compliance standards for the target market. Cross-reference the datasheet parameters with circuit design requirements to validate thermal and voltage margins before final procurement decisions.
Selection Notes
Select this component when a compact NPN transistor with moderate current handling and high-speed switching capabilities is required. The SOT-23-3 package facilitates automated surface-mount assembly. Evaluate the 32 V collector-emitter rating against system supply voltages to ensure adequate safety margins during normal operation and transient conditions.
Part Context
This part belongs to the BCW65AL series of general-purpose transistors produced by onsemi. It serves as a standard discrete semiconductor solution for consumer electronics and industrial control systems. The device complements other components in the same family, offering consistent performance metrics for mass-produced hardware designs requiring reliable small-signal processing.
Replacement Considerations
BCW65ALT3 is a documented alternative variant within the same functional category.
FAQ
What is the maximum collector-base voltage rating?
The BCW65CLT1G has a maximum collector-base voltage (VCBO) rating of 60 V.
Does the device support surface-mount technology?
Yes, the component is designed for surface-mount installation in an SOT-23-3 package.
What is the minimum DC current gain specified?
The minimum DC current gain (hFE) for this transistor is specified as 80.
