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Product Detailed Parameters
- Description：TRANS NPN 45V 0.8A SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：800 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：20nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 100mA, 1V
- Power - Max：300 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The BCW66GLT1G is a single NPN silicon bipolar junction transistor manufactured by onsemi. It is housed in an SOT-23-3 surface-mount package designed for general-purpose applications. The device supports a maximum collector current of 800 mA and operates with a collector-emitter voltage rating of 45 V. Key electrical specifications include a collector-base voltage of 60 V, an emitter-base voltage of 5 V, and a power dissipation capacity of 225 mW. The component features a gain-bandwidth product (fT) of 100 MHz and a collector-emitter saturation voltage of 300 mV. It functions within a temperature range from -55°C to +150°C.
Feature Summary
- Single NPN silicon construction optimized for general-purpose switching and amplification tasks.
- Compact SOT-23-3 surface-mount footprint suitable for space-constrained PCB layouts.
- High collector current capability of 800 mA for moderate load driving requirements.
Applications
- General-purpose signal switching circuits
- Low-power amplifier stages
- Driver circuits for small loads
Procurement Notes
Verify the specific suffix 'LT1G' against the official onsemi datasheet to confirm packaging configuration and RoHS compliance status. Ensure that the ordering part number matches the required tape-and-reel quantity specifications provided in the manufacturer's documentation. Cross-reference the automotive prefix requirements if the application demands unique site control changes.
Selection Notes
Select this component when a single NPN transistor with 45 V breakdown and 800 mA current handling is required in an SOT-23-3 package. Consider the 100 MHz bandwidth limit for high-speed applications. Evaluate thermal management needs given the 225 mW power dissipation rating in the specified surface-mount case outline.
Part Context
This part belongs to the BCW66 series of general-purpose NPN transistors from onsemi. It shares the SOT-23-3 form factor with other devices in the family but differs in voltage and current ratings compared to variants like the BCW65 or BCW67. The 'G' suffix typically indicates lead-free and halogen-free compliance according to manufacturer standards.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult the official onsemi replacement guide or datasheet cross-reference section for verified equivalents.
