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Product Detailed Parameters
- Description：TRANS NPN 45V 0.8A PG-SOT23
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：800 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：450mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 100mA, 1V
- Power - Max：500 mW
- Frequency - Transition：170MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：PG-SOT23
- Grade：-
- Qualification：-
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Overview
The BCW66KGE6327HTSA1 is an NPN silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in a surface-mount SOT-23-3 package and supports a maximum collector current of 800 mA with a collector-emitter voltage rating of 45 V. The device features a minimum DC current gain (hFE) of 40, ensuring reliable amplification capabilities. Designed for robust performance, it operates within a temperature range of -65°C to +150°C and meets AEC-Q100 automotive qualification standards.
Feature Summary
- Automotive-grade reliability certified under AEC-Q100 standards
- High thermal stability supporting operation up to 150°C
- Surface-mount SOT-23-3 packaging for compact circuit integration
Applications
- Automotive electronic control units
- General-purpose signal amplification
- Switching applications in harsh environments
Procurement Notes
Verify the specific suffix KGE against official Infineon documentation to confirm the exact hFE binning and electrical characteristics, as suffix variations define performance tiers. Confirm end-of-life status and lead times directly with authorized distributors or the manufacturer, as availability may be limited due to production phase-out notices found in public records.
Selection Notes
Select this component when automotive qualification and high-temperature operation are required for NPN switching or amplification tasks. Ensure the design accommodates the 45 V collector-emitter voltage limit and 800 mA continuous current capability. Verify that the SOT-23-3 thermal dissipation limits align with the application's power requirements and ambient conditions.
Part Context
This part belongs to the BCW66 series of general-purpose NPN transistors from Infineon. The series is widely used in automotive and industrial applications requiring small-signal handling. The specific model integrates standard BJT functionality with automotive-grade screening, distinguishing it from commercial-grade equivalents in terms of reliability and environmental tolerance.
Replacement Considerations
Consult official Infineon substitution guides for direct replacements. Generic cross-references may not match the AEC-Q100 qualification or specific hFE ranges defined by the KGE suffix.
