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The BCW68GE6327HTSA1 is a PNP silicon bipolar junction transistor (BJT) from Infineon Technologies, housed in an SOT-23-3 surface-mount package. It features a maximum collector-emitter voltage of 45 V and a collector-base voltage of 60 V. The device supports a continuous collector current of 800 mA with a power dissipation rating of 330 mW. Key electrical characteristics include a DC current gain range of 160 to 400 and a transition frequency of 200 MHz. It operates within a temperature range of -65°C to +150°C.
Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance documentation matches specific manufacturing batches. Validate that the SOT-23-3 footprint aligns with existing PCB designs. Ensure thermal management strategies account for the 330 mW power dissipation limit under expected operating conditions.
Select this component when a PNP transistor with moderate current handling and high gain is required. The AEC-Q100 qualification makes it suitable for automotive environments. Compare against BCW68FE or BCW68HE variants if different gain ranges or saturation voltages are needed. Ensure the 45 V voltage rating exceeds circuit requirements.
This part belongs to the BCW68 series of small-signal PNP transistors designed for general-purpose use. The suffix E6327 indicates specific ordering and packaging details managed by Infineon. The series is widely used in low-power analog and digital switching applications across industrial and consumer sectors.
BCW68FE6327HTSA1 offers similar voltage ratings but lower current gain. BCW68HE6327HTSA1 provides higher current gain but may have different saturation characteristics. Verify pinout compatibility and thermal performance before substitution.