BCW68GE6327HTSA1

BCW68GE6327HTSA1

$0.25
  • Description:TRANS PNP 45V 0.8A PG-SOT23
  • Series:-

SKU:0996de529f03 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 45V 0.8A PG-SOT23
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
  • Power - Max:330 mW
  • Frequency - Transition:200MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:PG-SOT23
  • Grade:-
  • Qualification:-

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BCW68GE6327HTSA1

Overview

The BCW68GE6327HTSA1 is a PNP silicon bipolar junction transistor (BJT) from Infineon Technologies, housed in an SOT-23-3 surface-mount package. It features a maximum collector-emitter voltage of 45 V and a collector-base voltage of 60 V. The device supports a continuous collector current of 800 mA with a power dissipation rating of 330 mW. Key electrical characteristics include a DC current gain range of 160 to 400 and a transition frequency of 200 MHz. It operates within a temperature range of -65°C to +150°C.

Feature Summary

  • PNP silicon construction for reliable switching performance
  • Automotive qualification compliant with AEC-Q100 standards
  • High current gain suitable for amplification applications

Applications

  • General-purpose switching circuits
  • Amplifier stages in consumer electronics
  • Automotive embedded systems requiring AEC-Q100 compliance

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance documentation matches specific manufacturing batches. Validate that the SOT-23-3 footprint aligns with existing PCB designs. Ensure thermal management strategies account for the 330 mW power dissipation limit under expected operating conditions.

Selection Notes

Select this component when a PNP transistor with moderate current handling and high gain is required. The AEC-Q100 qualification makes it suitable for automotive environments. Compare against BCW68FE or BCW68HE variants if different gain ranges or saturation voltages are needed. Ensure the 45 V voltage rating exceeds circuit requirements.

Part Context

This part belongs to the BCW68 series of small-signal PNP transistors designed for general-purpose use. The suffix E6327 indicates specific ordering and packaging details managed by Infineon. The series is widely used in low-power analog and digital switching applications across industrial and consumer sectors.

Replacement Considerations

BCW68FE6327HTSA1 offers similar voltage ratings but lower current gain. BCW68HE6327HTSA1 provides higher current gain but may have different saturation characteristics. Verify pinout compatibility and thermal performance before substitution.

BCW68GE6327HTSA1BCW68GE6327HTSA1
$0.25
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