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The BCW68GLT1G is a PNP silicon small-signal transistor housed in an SOT-23 (TO-236AB) surface-mount package. It features a collector-emitter breakdown voltage of -45 Vdc and supports continuous collector currents up to -800 mAdc. The device exhibits a current-gain bandwidth product of 100 MHz and operates within a junction temperature range of -55°C to +150°C.
Verify the ordering suffix matches the required tape and reel specifications, as packaging details are defined in separate documentation. Confirm that the NSV prefix aligns with project requirements for unique site and control change protocols associated with automotive qualification standards.
Select this component when a PNP transistor with high current gain and moderate voltage ratings is needed in a compact SOT-23 footprint. Ensure the application environment remains within the specified thermal limits and that the Pb-free construction meets environmental compliance mandates.
This part belongs to the BCW68GL series of PNP silicon transistors manufactured by onsemi. It serves as a general-purpose alternative to other small-signal bipolar transistors, offering standardized pinouts and electrical characteristics suitable for widespread industrial and commercial circuit designs.
Consult the datasheet for complementary types such as the BCW67GL. Verify pinout compatibility and electrical parameters against existing designs before substituting with other manufacturers' equivalents.