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The BCW68HE6327HTSA1 is a PNP silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. It operates with a maximum collector-emitter voltage of 45 V and a continuous collector current of 800 mA. The device features a collector-base voltage of 60 V and an emitter-base voltage of 5 V. Electrical characteristics include a DC current gain ranging from 250 to 630, a transition frequency of 200 MHz, and a collector-emitter saturation voltage of 700 mV. Power dissipation is rated at 330 mW. It is housed in an SOT-23-3 surface-mount package and supports an operating temperature range from -65 °C to +150 °C. The component holds AEC-Q100 qualification.
Verify the specific suffix HTSA1 against official Infineon documentation to confirm packaging and tape-and-reel specifications. Confirm end-of-life status as indicated by distributor data, which suggests potential obsolescence. Ensure compatibility with SOT-23-3 footprint requirements during procurement planning.
Select this component when a PNP BJT with 45 V rating and 800 mA current capacity is required in an SOT-23-3 package. Consider the 200 MHz transition frequency for high-speed switching needs. Verify thermal management capabilities given the 330 mW power dissipation limit and ensure the application environment falls within the specified temperature range.
This part belongs to the BCW68 series of PNP transistors from Infineon Technologies. The series is designed for general-purpose use in both consumer and automotive electronics. The E6327 suffix typically denotes specific packaging or tape-and-reel configurations used by the manufacturer for automated assembly processes.
Check for direct cross-reference parts within the BCW68 family. Verify pinout compatibility and electrical parameters such as VCEO and IC before substituting with other manufacturers' equivalents.