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The BCW68HTA is a PNP medium power transistor manufactured by Diodes Incorporated in an SOT-23 package. It features a collector-emitter breakdown voltage of -45V and a continuous collector current rating of -800mA. The device exhibits low saturation characteristics, with VCE(sat) less than -300mV at -100mA base drive. Electrical parameters include a collector-base breakdown voltage of -60V, emitter-base breakdown voltage of -7V, and a transition frequency of 100MHz. Power dissipation is rated at 310mW under standard conditions.
Verify the specific ordering suffix TA against official Diodes documentation to confirm reel size and packing quantity specifications. Ensure that the component meets all applicable environmental directives required for the target assembly process. Confirm that the manufacturer's quality standards align with project requirements before finalizing procurement orders.
Select this component when a PNP transistor with -800mA current capacity and -45V voltage rating is required in a compact SOT-23 footprint. Consider the low saturation voltage specification for efficiency-critical designs. Verify thermal management capabilities based on the specified power dissipation limits and ambient operating temperature range.
This part belongs to the BCW68H series of medium power transistors designed for surface mount technology. It serves as the PNP counterpart to the BCW66H NPN device, enabling push-pull or complementary circuit topologies. The series is engineered for general electronic applications requiring reliable switching performance in small form factors.
Direct replacement options include the BCW66H for complementary NPN requirements. For equivalent PNP functionality, verify cross-reference availability from other manufacturers ensuring identical pinout and electrical ratings match the original design constraints.