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The BCW71,215 is a PNP silicon bipolar junction transistor manufactured by Nexperia. It utilizes the SOT-23 (TO-236AB) surface-mount package. The device supports a maximum collector current of 100 mA and withstands collector-emitter and collector-base voltages of 45 V each. The emitter-base voltage rating is 5 V. Power dissipation is limited to 250 mW. The transition frequency is 100 MHz. Operating temperatures range from -65 °C to +150 °C.
Verify the specific suffix against official Nexperia documentation to confirm the reel packaging quantity and tape specifications. Ensure the component matches the required RoHS compliance standards for your manufacturing process. Confirm that the ordering code corresponds exactly to the BCW71 variant rather than similar NPN types like the BCW70 or BCW72.
Select this component when a PNP transistor with 45 V breakdown and 100 mA current capacity is required in a compact SOT-23 footprint. It serves as the complementary counterpart to the BCW70 NPN transistor. Verify that the 250 mW power dissipation rating meets the thermal requirements of the target application environment.
This part belongs to the BCW7x series of general-purpose small-signal transistors produced by Nexperia. The series includes complementary NPN (BCW70), PNP (BCW71), and dual NPN (BCW72) variants. These components are designed for low-power switching and amplification tasks within consumer electronics and industrial equipment.
The BCW70,215 is the direct NPN complementary pair. For pin-compatible replacements, verify datasheets for other manufacturers' PNP transistors in the SOT-23 package with matching 45 V and 100 mA ratings.