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The BCX17T116 is a PNP bipolar junction transistor manufactured by ROHM Semiconductor. It features a collector-emitter voltage of 45 V and a continuous collector current rating of 500 mA. The device utilizes silicon technology and is housed in an SOT-23-3 surface-mount package. Key electrical specifications include a collector-base voltage of 50 V, an emitter-base voltage of 5 V, and a power dissipation capacity of 425 mW. The gain bandwidth product (fT) is specified at 200 MHz, with a collector-emitter saturation voltage of 620 mV. The maximum operating temperature reaches +150°C.
Verify the specific ordering suffix to ensure compatibility with required packaging formats such as tape and reel or cut tape. Confirm that the component meets RoHS compliance standards for your assembly process. Cross-reference the datasheet parameters against your circuit requirements to validate thermal and electrical limits before finalizing procurement decisions.
Select this component when a PNP transistor with moderate current handling and high-frequency response is needed in a compact footprint. The SOT-23-3 package suits space-constrained designs. Ensure the application voltage does not exceed the 45 V collector-emitter limit and consider the 425 mW power dissipation constraint under your specific thermal conditions.
This part belongs to ROHM Semiconductor's lineup of single bipolar transistors. It is categorized under general-purpose discrete semiconductors. The model number indicates a specific variant within the BCX series, tailored for surface-mount technology integration in modern electronic assemblies.
Consult official cross-reference lists for direct substitutes. Verify pinout compatibility and electrical parameter equivalence for any alternative components.