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BCX38CSTZ is a small signal NPN silicon Darlington transistor manufactured by Diodes Incorporated. It features a maximum collector current of 0.8 A and a collector-emitter breakdown voltage of 60 V. The device offers a minimum DC current gain of 10,000 at 500 mA and 5 V. It operates within a junction temperature range of -55°C to 200°C with a maximum power dissipation of 1 W. The component utilizes an E-Line (TO-92 compatible) through-hole package.
Verify the specific suffix CSTZ against official Diodes Incorporated documentation to confirm the E-Line package configuration and RoHS3 compliance status. Ensure the ordering part number matches the required tape and reel or tube packaging options available from authorized distributors. Cross-reference the manufacturer part number to avoid confusion with similar BCX38 variants that may differ in electrical tolerances or physical footprint.
Select this component when a high-gain NPN transistor is required for driving moderate loads directly. The 0.8A continuous collector current and 1W power dissipation support direct interface with relays or indicator lamps. The wide operating temperature range makes it suitable for industrial environments where standard commercial grade devices might fail. Verify that the through-hole mounting style aligns with the target PCB design constraints.
The BCX38 series comprises NPN Darlington transistors designed for general-purpose switching and amplification. The BCX38CSTZ variant specifically denotes the surface mount or through-hole compatible version depending on the exact datasheet revision, though typically associated with the E-Line package. This family provides high beta values, reducing base drive requirements compared to standard bipolar transistors.
Consult official substitution guides for equivalent Darlington configurations. Generic replacements must match the 60V V(BR)CEO, 0.8A I(C), and TO-92 compatible pinout. Verify that alternative parts meet the 10,000 hFE minimum requirement if high gain is critical.