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The BCX51-16,115 is a PNP medium power transistor from Nexperia, housed in an SOT89 (SC-62) surface-mounted plastic package. It features a collector-emitter voltage of -45 V and a continuous collector current of -1 A. The device supports a peak collector current of -2 A for single pulses up to 1 ms. It offers three DC current gain selections; the -16 suffix denotes a range of 100 to 250 at IC = -150 mA. Key electrical parameters include a transition frequency of 145 MHz and a maximum total power dissipation of 1.35 W on a 6 cm² copper pad. The component is qualified to AEC-Q101 standards.
Verify the specific ordering code suffix matches the required hFE binning. Confirm the package variant corresponds to the intended PCB footprint. Ensure the supply chain source provides original manufacturer documentation. Check for any recent product change notices affecting specifications or manufacturing sites. Validate that the component meets the specific environmental requirements of the target assembly process.
Select the BCX51-16 variant when a higher minimum DC current gain is required compared to the standard BCX51-10. Consider the SOT89 package dimensions and thermal resistance characteristics for heat dissipation needs. Evaluate the -45 V voltage rating against the circuit's maximum operating conditions. Compare the transition frequency and saturation voltage against alternative transistors for high-speed switching applications.
This component belongs to the BCX51 series of PNP medium power transistors manufactured by Nexperia. The series includes complementary NPN types such as the BCX54. The BCX51-16 specifically identifies the unit with the 100-250 hFE gain range. It shares the same physical package and general electrical limits as other gain bins within the BCX51 family.
BCX51-10 serves as a direct functional substitute with a different current gain range (63-160). BCX54-16 is the NPN complement offering similar performance characteristics for complementary circuits.