BCX5110TA

BCX5110TA

$0.37
  • Description:TRANS PNP 45V 1A SOT-89-3
  • Series:-

SKU:0986f96eb4a9 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 45V 1A SOT-89-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
  • Power - Max:1 W
  • Frequency - Transition:150MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:SOT-89-3
  • Grade:-
  • Qualification:-

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BCX5110TA

Overview

The BCX5110TA is a PNP medium power transistor manufactured by Diodes Incorporated, housed in an SOT-89 surface-mount package. It features a continuous collector current of -1 A and a peak pulse current of -2 A. The device provides a collector-emitter breakdown voltage (BVCEO) of -45 V and a collector-base breakdown voltage (V_CBO) of -45 V. Electrical characteristics include a transition frequency (f_T) of 150 MHz at -50 mA, a maximum DC current gain (h_FE) of 250 at -150 mA, and a collector-emitter saturation voltage (V_CE(sat)) of -0.5 V at -500 mA. Power dissipation reaches 1 W under standard conditions.

Feature Summary

  • Supports continuous collector currents up to -1 A with a peak pulse capability of -2 A for robust switching performance.
  • Provides low saturation voltage below -500 mV at -0.5 A to minimize power loss during conduction.
  • Features high transition frequency of 150 MHz suitable for amplification applications.
  • Constructed with lead-free, halogen-free, and antimony-free materials compliant with RoHS directives.

Applications

  • Medium power switching circuits
  • Audio frequency (AF) driver stages
  • Audio frequency output stages

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging quantity and reel specifications. Ensure that the component meets all applicable environmental compliance standards required for the target assembly process. Cross-reference the part marking code 'AA' with the datasheet to validate authenticity and correct device identification upon receipt.

Selection Notes

Select this component when a PNP transistor with -45 V collector-emitter voltage and -1 A continuous current rating is required. Consider the complementary NPN types BCX54 or BCX55 if matched pairs are needed for push-pull configurations. Evaluate thermal resistance values based on the specific copper area available on the printed circuit board layout to ensure adequate heat dissipation.

Part Context

This device belongs to the BCX51/52/53 family of PNP medium power transistors designed for general-purpose applications. It shares mechanical dimensions and pinout configurations with other variants in the series, differing primarily in breakdown voltage ratings and current gain ranges. The SOT-89 package facilitates efficient thermal management through its exposed collector pad design.

Replacement Considerations

BCX51TA

FAQ

What is the maximum collector-emitter voltage for the BCX5110TA?

The maximum collector-emitter breakdown voltage (BVCEO) is -45 V.

Is the BCX5110TA compatible with automotive applications?

Standard BCX5110TA parts are not explicitly designated as automotive-compliant; separate automotive-compliant parts such as BCX5216Q or BCX5316Q are available under different datasheets.

What is the typical DC current gain range?

The DC current gain (h_FE) typically ranges from 25 to 250, depending on the collector current test conditions specified in the electrical characteristics table.

BCX5110TABCX5110TA
$0.37
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