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The BCX5116TA is a PNP medium power transistor manufactured by Diodes Incorporated, housed in an SOT89 surface-mount package. It provides a continuous collector current of -1 A and a peak pulse current of -2 A. The device features a collector-emitter breakdown voltage (BVCEO) of -45 V and a collector-base breakdown voltage (BVCBO) of -45 V. Electrical characteristics include a DC current gain (hFE) ranging from 75 to 250 at -500 mA, a low saturation voltage of -0.5 V maximum at -500 mA, and a transition frequency of 150 MHz.
Verify the specific ordering suffix TA against the manufacturer's official documentation to confirm reel size and packing quantity specifications. Ensure that the component marking code AD matches the intended part variant. Confirm compliance with relevant environmental directives such as RoHS 3 before finalizing procurement orders.
Select this component when a PNP transistor with -45 V collector-emitter voltage and -1 A continuous current capacity is required. Consider the SOT89 package for thermal management needs involving up to 1 W of power dissipation on standard PCBs. Verify that the hFE range of 75 to 250 meets the specific gain requirements of the target circuit design.
This component belongs to the BCX51/52/53 family of PNP medium power transistors produced by Diodes Incorporated. The BCX5116TA specifically denotes the BCX51 variant with -45 V ratings packaged in SOT89. Complementary NPN types within the same series include the BCX54, BCX55, and BCX56 devices.
Publicly confirmed substitute part numbers are not available in the provided source material.