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The BCX51TA is a PNP medium power transistor manufactured by Diodes Incorporated in an SOT-89 package. It features a collector-emitter breakdown voltage of -45V and supports a continuous collector current of -1A with a peak pulse current of -2A. The device exhibits a low saturation voltage of less than -500mV at -0.5A and a transition frequency of 150MHz. Power dissipation reaches 1W under standard conditions, extending to 2W on large copper areas. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix TA against official Diodes Incorporated documentation to confirm reel size and tape width specifications. Ensure that the selected component matches the required electrical characteristics for the intended circuit design. Cross-reference datasheet DS35368 Rev. 12-2 for accurate mechanical dimensions and thermal resistance values before finalizing procurement decisions.
Select this component when a PNP transistor with a -45V collector-emitter voltage rating is required. Consider the SOT-89 package for surface-mount assembly constraints. Evaluate the thermal performance based on the expected copper area on the printed circuit board, as power dissipation capabilities vary significantly with pad size. Verify compatibility with complementary NPN types if push-pull configurations are utilized.
This part belongs to the BCX51/52/53 series of PNP medium power transistors designed for general-purpose applications. The BCX51 variant specifically offers a -45V breakdown voltage, distinguishing it from higher-voltage counterparts like the BCX52 (-60V) and BCX53 (-80V). All variants share identical physical packaging and pinout configurations within the SOT-89 footprint.
BCX51TC
The maximum peak pulse collector current is -2A.
Yes, the device is totally lead-free and fully RoHS compliant.
The typical DC current gain ranges from 40 to 250 at a collector current of -150mA.