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The BCX5210TA is a PNP medium power transistor manufactured by Diodes Incorporated, housed in an SOT-89 surface-mount package. It features a collector-emitter breakdown voltage (BVCEO) of -60 V and a continuous collector current rating of -1 A. The device supports a peak pulse collector current of -2 A and maintains a low saturation voltage below -500 mV at -0.5 A. Electrical characteristics include a transition frequency (fT) of 150 MHz and a DC current gain ranging from 25 to 250 depending on the operating conditions.
Verify the specific part number against official manufacturer documentation to confirm exact electrical tolerances and marking codes. Ensure that the procurement channel provides genuine components to avoid counterfeit risks. Confirm compliance requirements such as RoHS status and moisture sensitivity levels prior to finalizing orders.
Select this component for designs requiring a PNP transistor with a -60 V collector-emitter voltage rating. Consider the thermal resistance values when designing heat dissipation strategies for the SOT-89 package. Verify that the required DC current gain falls within the specified range for the intended operating current.
This device belongs to the BCX52 series of PNP medium power transistors produced by Diodes Incorporated. It serves as the complementary counterpart to the BCX55 NPN transistor within the same product family. The series is designed for general-purpose amplification and switching tasks in electronic circuits.
BCX52TA
The maximum collector-emitter breakdown voltage (BVCEO) is -60 V.
Yes, it has a transition frequency (fT) of 150 MHz, making it suitable for high-frequency applications.
The component is packaged in an SOT-89 surface-mount package.