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The BCX52,115 is a PNP medium power transistor from the Nexperia BCX52 series, housed in an SOT89 (SC-62) surface-mount package. It features a collector-emitter voltage of -60 V and a continuous collector current of -1 A. The device supports a peak collector current of -2 A for single pulses up to 1 ms. Key electrical characteristics include a DC current gain (hFE) range of 63 to 250 at IC = -150 mA, with specific selection groups available for tighter gain tolerances. The transition frequency is typically 145 MHz, and total power dissipation reaches up to 1.35 W depending on PCB mounting conditions.
Verify the specific ordering suffix against the manufacturer's latest documentation to confirm packaging details and availability status. Confirm that the selected hFE bin matches the design requirements, as different suffixes correspond to specific gain ranges. Ensure compliance with RoHS directives and check for any recent product change notices affecting lead times or specifications before finalizing procurement orders.
Select the appropriate hFE selection group based on the required gain tolerance for the application. Consider the thermal resistance values when designing the PCB copper area, as power dissipation capabilities vary significantly with mounting pad size. Verify that the operating junction temperature remains within the specified limits under maximum load conditions to ensure long-term reliability.
The BCX52 belongs to a family of PNP medium power transistors designed for surface-mount applications. It serves as the PNP complement to the BCX55 NPN series. The SOT89 package provides a balance between power handling and compact footprint, making it suitable for dense PCB layouts where thermal performance is critical.
BCX55-16,115 (NPN complement)
The standard BCX52 carries the marking code 'AE'.
The SOT89 package includes an exposed die pad that allows for excellent heat transfer to the PCB, significantly improving power dissipation compared to packages without such a feature.
Yes, the BCX52 series is qualified according to the AEC-Q101 stress test qualification for discrete semiconductors.