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The BCX5216TA is a PNP silicon medium power transistor manufactured by Diodes Incorporated, housed in an SOT-89-3 surface-mount package. It supports a maximum continuous collector current of 1 A and offers a collector-emitter breakdown voltage (VCEO) of 60 V, with a collector-base voltage (VCBO) of 60 V and an emitter-base voltage (VEBO) of 5 V. The device features a gain-bandwidth product (fT) of 150 MHz and a maximum power dissipation (Pd) of 1 W. It operates within a temperature range of -55 °C to +150 °C and exhibits a collector-emitter saturation voltage of 500 mV.
Verify the specific suffix TA indicates tape-and-reel packaging containing 1000 units per reel when ordering. Confirm RoHS compliance status through official manufacturer documentation or certified distributor datasheets prior to procurement. Ensure the SOT-89-3 footprint matches the design layout requirements. Cross-reference the manufacturer part number Diodes Incorporated BCX5216TA to avoid confusion with similar BCP series components.
Select this component for designs requiring a PNP transistor with 1 A current handling capability in a small outline package. The 60 V voltage rating suits low-to-medium voltage applications. Consider the 150 MHz bandwidth for high-speed switching needs. Compare against complementary NPN devices if push-pull configurations are required. Verify thermal management strategies align with the 1 W power dissipation limit in the intended enclosure.
The BCX5216TA belongs to the BCX52 series of PNP medium power transistors from Diodes Incorporated. This series complements the BCX51 and BCX53 families, providing matched performance characteristics for differential and push-pull circuits. The SOT-89-3 package distinguishes it from the larger SOT-223 packaged BCP52 variant, offering a balance between power handling and space efficiency for modern electronic assemblies.
BCX5216 is the non-suffix equivalent for loose component sourcing. BCP5216 serves as a pin-compatible alternative in the SOT-223 package with higher power dissipation capabilities.