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The BCX52E6327HTSA1 is a single PNP silicon bipolar junction transistor manufactured by Infineon Technologies. It utilizes an SOT-89-4 surface-mount package and supports continuous collector currents up to 1 A with a maximum collector-emitter voltage of 60 V. The device features a power dissipation rating of 2 W, a minimum DC current gain (hFE) of 70 at 50 mA and 5 V, and a transition frequency of 125 MHz. It operates within a temperature range of -65 °C to +150 °C.
Verify the specific suffix E6327HTSA1 against official Infineon documentation to confirm packaging and tape-and-reel specifications. Confirm end-of-life status prior to design finalization. Ensure compatibility with SOT-89-4 footprint requirements in the target PCB layout. Validate thermal resistance parameters for the intended enclosure environment.
Select this component for designs requiring high-current PNP switching in a compact surface-mount form factor. The SOT-89-4 package provides improved thermal dissipation compared to smaller alternatives. Verify that the 60 V collector-emitter voltage rating exceeds the maximum circuit operating voltage. Consider the 125 MHz transition frequency for appropriate bandwidth limitations in signal processing paths.
This part belongs to the BCX52 series of general-purpose NPN/PNP transistors designed for audio and switching applications. The E6327HTSA1 suffix indicates specific automotive-grade manufacturing and packaging standards. Infineon Technologies produces this component to meet rigorous reliability requirements for industrial and automotive electronics markets.
Consult official Infineon cross-reference documents for verified substitutes. Generic equivalents may not match the AEC-Q100 qualification or exact thermal characteristics.